smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD1918 features high breakdown voltage.(b vceo = 160v) low collector output capacitance.typ. 20pf at v cb = 10v high transition frequency.(f t = 80mhz) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5v 1.5 a(dc) 3a(pulse)* collector power dissipation 1 w t c =25 10 w junction temperature t j 150 storage temperature t stg -55to+150 * pw=200msec duty=1/2 i c collector current p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c = 50a 160 v collector to emitter breakdown voltage v (br)ceo i c = 1ma 160 v emitter to base breakdown voltage v (br)ebo i e = 50a 5 v collector cutoff current i cbo v cb = 120v 1 a emitter cutoff current i ebo v eb =4v 1 a collector to emitter saturation voltage * v ce(sat) i c /i b = 1a/0.1a 2 v base to emitter voltage * v be(sat) i c /i b = 1a/0.1a 1.5 v dc current transfer ratio h fe v ce /i c = 5v/0.1a 120 390 transition frequency f t v ce =5v,i e = -0.1a , f = 30mhz 80 mhz output capacitance c ob v cb = 10v , i e =0a,f=1mhz 20 pf * measured using pulse current. h fe classification rank q r hfe 120 to 270 180 to 390 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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